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Barrier CMP Slurries - Overview

FUJIFILM Electronic Materials barrier CMP slurries are designed to remove the barrier metals that are exposed following the copper clearing step as well as to planarize all films across the wafer surface.

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  • Outstanding corrosion protection for sensitive copper features and very low defectivity
  • Suitability for a wide range of integration schemes including low-K and ULK dielectrics, etch hard masks, and ARC layers
  • Fast removal of conventional barrier films and Co liner films
  • Independent component knobs for film selectivity tuning and customization, resulting in excellent final topography correction and surface finish
  • Attractive cost of ownership – concentrated formulations available to provide lower cost at point-of-use
Product Summary

Market-leading products are available to meet a broad range process and technology requirements.

Available Copper Barrier CMP Slurries
  • BSL8180C
    • A cobalt compatible alkaline barrier slurry designed for a wide variety of integration schemes that utilize low-K dielectrics
    • Wide range of tune-ability of copper and low-k/ULK removal rates
    • High purity colloidal silica
    • Ultra-low defectivity
    • Excellent performance on soft pads
    • Concentrated formulation for low cost of ownership
  • BSL8400C
    • A higher concentrated version, designed for the most advanced low-K dielectric integrations
    • Wide range of tune-ability of copper and low-k/ULK removal rates
    • High purity colloidal silica
    • Ultra-low defectivity
    • Excellent performance on soft pads
    • Concentrated formulation for low cost of ownership
  • BSL8300C
    • Designed for Ru liner polishing
    • High purity silica formulation in alkaline pH
    • High Ru removal rate
    • Tunable copper and low K rates
    • Dilutable formulation with cost competitiveness

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