e-Beam - Applications

EUV (13.5nm)

EUV materials for negative tone imaging

NIL (Nanoimprint Lithography)

NIL materials for semiconductor lithography process

ArF (193nm)

Materials for positive dry and immersion imaging, and negative tone imaging (NTI)

KrF (248nm)

Positive tone KrF photoresists covering a broad range of applications

i-Line, g-Line and Broadband

Extensive series of mid-uv sensitive photoresists for applications encompassing sub-0.30 µm to >1.0 µm resolution

Negative (Polyisoprene-based)

Multiple series of negative tone, polyisoprene-based resist systems