Front End CMP Slurries

• Multiple platforms with different baseline material removal selectivities
• Tunable selectivities within each platform
• Exceptionally low defectivity by design
• Competitive cost of ownership

• FSL1600C
  • Next-generation Poly Open Polish (POP) slurry for gate last/ replacement metal gate (RMG) integrations for Logic & Memory
  • Baseline of non-selective removal of nitride, oxide, and good stop on polysilicon
  • All 3 dielectrics’ rates and selectivities are tunable
  • High purity colloidal silica and ultra-pure chemicals for ultra-low defectivity
  • Concentrated formulation for attractive cost of ownership
• FSL1531C
  • Polysilicon slurry with stop on various dielectrics and metals
  • Very high and intermediate polysilicon rates possible. High Ti/ TiN liner rates
  • TMAH-free, EHS benign chemistry and high purity colloidal silica delivers ultra-low defectivity
  • Highly dilutable slurry offerings for attractive cost of ownership
• FSL1700C
  • Silicon oxide slurry with stop on silicon nitride
  • Market-leading “silica – based” Shallow Trench Isolation (STI) slurry
  • Changes the industry – moves the standard for STI from ceria to silica
  • Very good stop on silicon nitride on blanket and patterned wafers
  • Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
  • Ultra-low defectivity (vs. ceria) due to use of high purity colloidal silica
  • Critical slurry for defectivity improvement in STI applications for advanced logic and memory
  • Concentrated formulation for attractive cost of ownership (CoO)
• FSL1820C
  • Silicon Nitride slurry with stop on silicon oxide
  • Nitride slurry for “Reverse – STI” applications such as SAC Cap, HM, Etch-Stop, etc.
  • Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
  • High selectivity of silicon nitride to silicon oxide on blanket and patterned wafers
• FSL1400C
  • Metal (Ti, Zr, Hf, Al) oxide slurry with non-selective rates to dielectrics
  • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
  • Proprietary removal rate enhancing chemistries to obtain high film rates
  • High purity colloidal silica based dilutable formulations for ultra-low defectivity and attractive CoO
• FSL1450C
  • Metal (Ti, Zr, Hf, Al) Oxide slurry with stop on dielectrics
  • Good stop on silicon nitride, oxide, SiGe and polysilicon films
  • Tunable rates and selectivities of metal oxides and silicon-based dielectrics
  • High purity colloidal silica based highly dilutable formulations for low defectivity and attractive CoO
• FSL3400C
  • Tungsten slurry with either stop on dielectrics or non-selective to dielectrics
  • Good stop on silicon nitride, oxide, SiGe and poly-silicon films for stop on dielectric applications
  • Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
  • High purity colloidal silica based highly dilutable formulations for ultra-low defectivity

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