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An image of a wafer, a semiconductor material that is illuminated by multiple lights.

EUV (13.5nm) - Overview

EUV materials for negative tone imaging

EUV resist for NTI (Negative Tone Imaging) process.
NTI developer that uses a high-purity organic solvent to suppress resist swelling and defects during development, enabling the formation of sharp, fine circuit patterns.

Key technology for EUV-NTI process

Technology summary of EUV NTI process by FUJIFILM

This image shows how 2 of Fujifilm's key technologies are used in the semiconductor manufacturing process. The PCP technology of EUV resists synthesizes a new structure that combines PAG, a photoacid generator, and PDQ, a photodegradable quencher, in the coating process to achieve uniform molecule distribution in the film. In the development process, the NTI developer DP819A, a mixture of DP001 (nBA) and a hydrophobic solvent X, suppresses resist film swelling by selective volatilization during spin drying.

*1 Photo Decomposable Quencher

Product Lineup

EUV NTI CAR
EUV NTI developer DP819A

Features & Benefits

PAG connected photo decomposable quencher (PCP) with a reaction control function of the resist is introduced. By maintaining a uniform acid concentration in the film during exposure, the LWR, which has been a problem with conventional chemically amplified resists, is reduced.
NTI developer using high-purity organic solvent suppresses resist swelling and defects during development for high patterning accuracy.

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