- Outstanding corrosion protection for sensitive cobalt features
- Compatibility with a wide range of integration schemes including varies dielectrics, etch hard masks, and ARC layers
- Tunable selectivity to meet customized film stacking and final finishing targets
- Attractive cost of ownership – concentrated formulations available to provide lower cost at point-of-use
Product Summary
Market-leading products are available to meet a broad range of process and technology requirements.
Available Cobalt CMP Slurries
- MSL5100C
- Step 1 Cobalt slurry platform for removal of damascene Co metal features
- Highly concentrated for low cost of ownership
- Proprietary corrosion inhibitor system provides excellent corrosion protection of Cobalt metal
- Good planarization efficiency
- Tunable selectivity to Ti and TiN
- MSL5200C
- Step 2 Cobalt slurry platform for final polish of damascene Co metal and dielectric features
- Concentrated formulation for attractive cost of ownership
- Tunable Co removal rate, independent of other films
- Excellent surface finish with excellent Cobalt metal protection
Available Ru CMP Slurries
- MSL5500C
- Ruthenium (Ru) slurry platform for removal of Ru metal features
- Concentrated formulation for attractive cost of ownership
- Proprietary corrosion inhibitor system provides excellent corrosion protection of Mo metal
- Good planarization efficiency
- High selectivity to dielectric films
Available Mo CMP Slurries
- MSL5600C
- Molybdenum (Mo) slurry platform for removal of damascene Mo metal features
- Concentrated formulation for attractive cost of ownership
- Proprietary corrosion inhibitor system provides excellent corrosion protection of Ru metal
- Good planarization efficiency
- High selectivity to dielectric films
Available W CMP Slurries
- MSL3100C
- Tungsten (W) slurry with either stop on dielectrics or non-selective to dielectrics
- Good stop on silicon nitride, oxide, SiGe and polysilicon films for stop on dielectric applications
- Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
- High purity colloidal silica based highly dilutable formulations for ultra-low defectivity
- MSL3200C
- Tungsten (W) slurry platform for final polish of W metal and dielectric features
- Concentrated formulation for attractive cost of ownership
- Tunable W removal rate, independent of other films
- Excellent surface finish with excellent W metal protection
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