FUJIFILM Electronic Materials barrier CMP slurries are designed to remove the barrier metals that are exposed following the copper clearing step as well as a portion of the inter-metal dielectric.
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Barrier CMP Slurries
FUJIFILM Electronic Materials barrier CMP slurries are designed to remove the barrier metals that are exposed following the copper clearing step as well as to planarize all films across the wafer surface.
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Chemical mechanical planarization (CMP) is a critical process in the fabrication of advanced semiconductor devices or “microchips” used in today’s electronics. -
Copper CMP Slurries
FUJIFILM Electronic Materials copper CMP slurries are designed to remove the copper overfill to expose underlying damascene interconnects.
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Emerging Metal Slurries
FUJIFILM Electronic Materials Cobalt CMP slurries are designed to polish cobalt and barrier metals and planarize all films in the circuits during advanced Cobalt interconnect polish.
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Front End CMP Slurries
FUJIFILM Electronic Materials Front End CMP slurries are designed for devices that utilize advanced transistor technologies such as high-K metal gates, advanced dielectrics, 3-dimensional FinFET transistors, and self-aligned contacts.
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Post CMP Cleaners
FUJIFILM Electronic Materials Post CMP slurries are designed to clean particles, trace metal and organic residues while protecting the metal surface.
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