- High removal rates, high planarization efficiency, low topography, low defectivity, and excellent over polish margins
- Tunable formulations – with independent component knobs for customers’ specific performance targets
- High selectivity to common barrier films resulting in easy end-point detection and good copper residual clearing without compromising topography
- Strong Prestonian behavior in copper polishing for easy process development and control
- Low cost of ownership due to highly concentrated formulations
- Ease of use – special cleaning chemistries or process conditions are not required
Market-leading products are available to meet the performance requirements for a broad range of process and technology requirements.
- CSL9044C
- Developed for a wide variety of devices including leading edge circuits
- Well proven and established product in copper applications
- Provides high removal rates to maximize process throughput
- High selectivity to barrier films
- Low defectivity
- Excellent copper clearing capability
- High planarization efficiency
- Low dishing and erosion
- Robust process can be developed for a great range of applications from mature technology nodes to the most advanced nodes including thick metal layers
- CSL9400C
- Developed for leading edge circuits
- Higher removal rates to maximize process throughput and reduce copper polish to one (1) platen
- Excellent selectivity to barrier films
- Significantly low defectivity
- Excellent copper clearing capability
- Low but tunable dishing and erosion
- Suitable for a range of technology nodes including logic, memory or thick metal polishing
- CSL9500C
- Developed for leading edge circuits including Ruthenium liner integrations
- Provides high removal rates to maximize process throughput
- Excellent selectivity to barrier films
- Ultra low defectivity
- Excellent copper clearing capability
- Low but tunable dishing and erosion
- Suitable for the most advanced integration applications
- CSL9215C
- Developed for very thick metal applications
- Removal rates to maximize process throughput for TSV copper polish
- Excellent selectivity to barrier films
- Low defectivity
- Excellent copper clearing capability
- Topography following copper clear meets TSV requirements
- CSL9300C
- Developed for defect sensitive applications
- Ultra low defectivity, particularly for scratches
- Best suited for semi-hard pad copper bulk processing for great planarization efficiency, low topography, and excellent copper clearing
- Excellent selectivity to barrier materials and low k materials, especially for advanced applications with thin barrier layers
- Provides high removal rates to maximize process throughput
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