Select Your Location

This is Fujifilm Croatia website.
To browse products and services available in your area,
please choose another country or region.

See all countries and regions

You are accessing from the United States. To browse Fujifilm USA website, please click the following link.

Fujifilm USA Website
Collections of plastic blue barrels

Barrier CMP Slurries - Overview

FUJIFILM Electronic Materials barrier CMP slurries are designed to remove the barrier metals that are exposed following the copper clearing step as well as to planarize all films across the wafer surface.

  • Outstanding corrosion protection for sensitive copper features and very low defectivity
  • Suitability for a wide range of integration schemes including low-K and ULK dielectrics, etch hard masks, and ARC layers
  • Fast removal of conventional barrier films and Co liner film
  • Independent component knobs for film selectivity tuning and customization, resulting in excellent final topography correction and surface finish
  • Attractive cost of ownership – Concentrated formulations available to provide lower cost at point-of-use

Product Lineup

Market-leading products are available to meet a broad range process and technology requirements.

  • BSL8180C
    • A cobalt compatible alkaline barrier slurry designed for a wide variety of integration schemes
    • Wide range of tune-ability of Copper and low-k/ULK removal rates
    • High purity colloidal silica
    • Ultra-low defectivity
    • Excellent performance on soft pads
    • Concentrated formulation for low cost of ownership
  • BSL8400C
    • A higher concentrated version, designed for the most advanced low-K dielectric integrations
    • Wide range of tune-ability of Copper and low-k/ULK removal rates
    • High purity colloidal silica
    • Ultra-low defectivity
    • Excellent performance on soft pads
    • Concentrated formulation for low cost of ownership
  • BSL8250C
    • A cost competitive colloidal silica slurry suitable for both hard and soft pads
    • Very high barrier and dielectric removal rates with Tunable Cu rate suitable for a range of applications including logic, memory and thick TEOS containing devices
  • BSL8300C
    • Designed for Ru liner polishing
    • High purity silica formulation in alkaline pH
    • High Ru removal rate
    • Tunable Cu and low K rates
    • Dilutable formulation with cost competitiveness
  • BSL86xxC
    • High purity colloidal silica
    • Ultra-low defectivity
    • Excellent performance for topography, especially planarity
    • Demonstrated Cu Via performance