Estonia

Core Technologies

MEMS Technology

Device design and prototyping using FUJIFILM’s unique Piezoelectric Film

Fujifilm’s deep knowledge of piezoelectric materials and deposition technologies, as well as its rapid device prototyping line, enable us to quickly design, build, and test MEMS devices that meet your needs

Advantages of FUJIFILM’s piezoelectric material
  • Good displacement response linearity
  • No poling process required
    Finished device can be immediately operated. Even heated above Curie temperature, the device response is unaltered.
  • Highly uniform across a wafer and wafer-to-wafer

Piezoelectric film on 8-inch wafer

High Piezoelectric Constant and Excellent Durability
This bar graph compares the piezoelectric constants of Fujifilm’s Nb-doped PZT, Company A’s sputtered PZT, Company B’s sputtered PZT, and Company C’s sol-gel PZT. Fujifilm’s PZT has a piezoelectric constant d31 of 220, the highest value compared to Companies A through C.
This plot graph shows the changes in displacement amount in relation to the number of pulses. It shows that there is no degradation in displacement even after 1011 pulses.
FUJIFILM’s proprietary Highly Nb-doped PZT film (patented)
These show the crystal structure of Nb-doped PZT, the cross-sectional SEM images of conventional bulk products and Fujifilm’s thin membranes, and a schematic diagram of the polarization direction. Nb-doped PZT has niobium inserted in the center of the crystal lattice instead of zirconium or titanium. Unlike bulk products, our thin membrane’s structure is composed of crystal columns that extend in the direction of the coating thickness, with the polarization direction aligned in the same direction.