Product Summary
- Multiple platforms with different baseline material removal selectivities
- Tunable selectivities within each platform
- Exceptionally low defectivity by design
- Competitive cost of ownership
Available Front End CMP Slurries
- FSL1600C
- Next-generation Poly Open Polish (POP) slurry for gate last/ replacement metal gate (RMG) integrations for Logic & Memory
- Baseline of non-selective removal of nitride, oxide, and good stop on polysilicon
- All 3 dielectrics’ rates and selectivities are tunable
- High purity colloidal silica and ultra-pure chemicals for ultra-low defectivity
- Concentrated formulation for attractive cost of ownership
- FSL1531C
- Polysilicon slurry with stop on various dielectrics and metals
- Very high and intermediate polysilicon rates possible. High Ti/ TiN liner rates
- TMAH-free, EHS benign chemistry and high purity colloidal silica delivers ultra-low defectivity
- Highly dilutable slurry offerings for attractive cost of ownership
- FSL1700C
- Silicon oxide slurry with stop on silicon nitride
- Market-leading “silica – based” Shallow Trench Isolation (STI) slurry
- Changes the industry – moves the standard for STI from ceria to silica
- Very good stop on silicon nitride on blanket and patterned wafers
- Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
- Ultra-low defectivity (vs. ceria) due to use of high purity colloidal silica
- Critical slurry for defectivity improvement in STI applications for advanced logic and memory
- Concentrated formulation for attractive cost of ownership (CoO)
- FSL1820C
- Silicon Nitride slurry with stop on silicon oxide
- Nitride slurry for “Reverse – STI” applications such as SAC Cap, HM, Etch-Stop, etc.
- Slurry can further stop on other metal (such as W, Co) or dielectric (such as polysilicon) films
- High selectivity of silicon nitride to silicon oxide on blanket and patterned wafers
- FSL1400C
- Metal (Ti, Zr, Hf, Al) oxide slurry with non-selective rates to dielectrics
- Tunable rates and selectivities of metal oxides and silicon-based dielectrics
- Proprietary removal rate enhancing chemistries to obtain high film rates
- High purity colloidal silica based dilutable formulations for ultra-low defectivity and attractive CoO
- FSL1450C
- Metal (Ti, Zr, Hf, Al) Oxide slurry with stop on dielectrics
- Good stop on silicon nitride, oxide, SiGe and polysilicon films
- Tunable rates and selectivities of metal oxides and silicon-based dielectrics
- High purity colloidal silica based highly dilutable formulations for low defectivity and attractive CoO
- FSL3400C
- Tungsten slurry with either stop on dielectrics or non-selective to dielectrics
- Good stop on silicon nitride, oxide, SiGe and poly-silicon films for stop on dielectric applications
- Tunable rates and selectivities of W and silicon-based dielectrics for non-selective applications
- High purity colloidal silica based highly dilutable formulations for ultra-low defectivity
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