We offer a broad range of diluted Hydrofluoric (HF) ratios, specialty Buffered Oxide Etchants (BOE) - with/without surfactant, Mixed Acid etchants (MAE) & specialty metal etchants
- Buffered Oxide Etchants
- Fujifilm has advanced capabilities for the precise blending of Buffered Etchants with tight assay specification ranges, available in multiple NH4F:HF ratios
- Utilized to etch SiO2 films
- Utilized as pre-diffusion and pre-metallization surface preparations
- Formulated from high purity 49% Hydrofluoric Acid and high purity 40% Ammonium Fluoride
- Available with and without surfactant
- Dilute HF
- Fujifilm has advanced capabilities for the precise blending of dilute HF with tight assay specification ranges
- Freckle Etch
- For the removal of residual silicon nodules left after etching aluminum-silicon-copper layers
- Mixed Acid Etchants
- For the isotropic etching of silicon (mono and poly-crystalline)
- Specialty Pad Etchants
- Used to etch deposited pyro lytic and sputtered final passivation glasses in order to expose semiconductor bonding pads for wire bonding
- Available with and without our OHS surfactant
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For the selective removal of specific metal layers Fujifilm offers various specialty etchants, including
- Specialty Aluminum Etchants: Immersion etchants for aluminum metallization layers - Available with or without the Fujifilm Aluminum Etch Surfactant (AES)
- Chrome Etch: a specialty blend for the patterning of Chromium layers
